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MICRO OPTICS I

USI PHOTONICS provides a state of the art solution for all your needs in the various Design, Prototyping and Production phases of your Micro Optical Elements

 

 

USI Photonics provides extensive design and simulation capabilities to its customer; for thier specific needs. we use custom micro-optics design, simulation as well as EDA tools which have been optimizzed for the specific needs of micro-optics (Refractive, Diffractive, Holographic or Waveguide.)

Prototyping of micro-optics is done at USI's micro-optics fab facilities located in San Jose, California, on silicon, fused silica, quartz or other wafer materials.

Production line can provide customers with small runs of up to several thousand replicas on wafers. Larger quantities, in millions of units, can be obtained by plastic injection molding or plastic UV or hot embossing which USI also proposes as an add on to its foundry services.

 

Available Turnkey Processes. USI can provide the state of the art lithographic fabrication techniques, both in Si and Quartz wafers, such as:

  • Binary and  Multilevel phase relief. (2,4,8, and 16 levels).
  • Grey Scale masking process. (Analog surface relief).
  • Resist reflow process (Micro-Refractive profiles).

 

MICRO-FABRICATION PROCESSES

Fabrication Step Process Dimension                        Specifications  Comments
Min   Max  Typical
Wafers Quartz

4 and 6 inch Wafers, Standard Thickness

Silicon

4 and 6 inch wafers, all types of Silicon

Fused Silica

4 and 6 inch wafers. UV grade fused silica or standard grade.

Mask Patterning Critical Dim. μm 0.35 - 1.35 Smallest Feature 1X
Fracture Grid nm 50 250 100 Custom Fracture Grid
Intensity Levels - 2 256 2 Binary Cr / grey scale masking.
Mask Size Inches 2 9 5 Standard / Custom
Mask Thickness milli-inches 90 250 125 Standard / Custom
Optical Lithography Reduction Factor - 1 5 1 Mask Aligner/Stepper
Resolution μm 0.35 - 1.25 Positive / Negative Resist
Alignment Accuracy nm 50 500 250 Custom alignment features.
Size of batch - 1 25 20 Wafer Batch
Etching Metal Etch μm (lateral res) 0.3 - 1.25 Cr, Al, Au
HF Etch nm (depth) 0.01 500.0 5.0 Quartz or Si etch.
Dry RIE Si μm(depth) 0.01 10.0 0.5 Si wafer O2
Dry RIE Q μm(depth) 0.01 5.0 0.6 Quartz etch CHF3
Other Plasma and Wet etching of metal, silicon, poly, nitride, oxide. RIE etching of metal, silicon, nitride and oxide
Coating/Deposition / doping Metal Coat A (thickness) 100 50,000 3000 Cr, Al, Au.
Deposition Vapox low temperature oxide glassivtion - SiO2
Metal Dep Al - Si 1% and pure Al
Doping Boron, POCl3
Diffusion Twenty four furnaces for thin film, CMOS and bipolar and other processes. (Oxidation furnaces (Trans LC), Nitride deposition, LTO doped and undoped.
Dicing Any substrate Die Size in mm 0.05 - 5.0 Diamond dicing.
Packaging Shipping Gel packs, spring loaded wafer holders.

 

                                                                                                                                        MICRO OPTICS II

 

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                                                 1925 Zanker Road,  San Jose, CA 95112                                                                        Updated:  04/01/2009