Thin Film RCs & RCDs
Integrated thin film resistor capacitor
diode network termination products are built on silicon substrates. USI's thin
film resistors, capacitors and diodes are fabricated using proprietary,
state-of-the-art thin film technology that offers high performance at very high
frequencies in compact QSOP or flip chip assemblies, making them ideal for
portable, wireless, compact and high performance end products. These include
pure resistor networks, resistor capacitor diode networks with transistor/mosfet
arrays, Schottky diodes, network terminations including customized circuits
with transistors for specific applicationS.
The great advantage with this process and
these products is that all electrical devices have uniform values and tolerances
unlike discrete devices. This reduces manufacturing cost and inventory greatly.
These networks are ideal for high speed /
frequency data and communication applications, providing excellent performance,
minimizing space and cost. Integrated thin film resistor capacitor diode network
processes improve reliability, electrical and mechanical stability and
performance at higher frequencies when compared to traditional thick film
Superior performance and reliability is
achieved through advanced semiconductor processing techniques that ensure highly
uniform thin film material. All products are available in wide and narrow body
SOIC, QSOP, TSSOP, Solder bumps and die pack packages. (Tape and Reel)
Thin film nitride depositions are
available with LPCVD and PECVD thicknesses from a few hundred Angstroms to
While we have standard devices (listed
below) Resistor Capacitor values and the circuitry structure can be tailored to
meet individual customer requirements.
IsoPower High Voltage
Integrated Circuits. USI utilizes a flexible building block approach that
enables development of complete systems-on-a-chip using standard and proven cell
libraries. Bipolar, CMOS, DMOS and MEMs can be integrated together, providing
tremendous performance and cost benefits. Details are available in the
USH5000 Smart Power technology allows tremendous flexibility for interconnecting
circuits operating at up to 500Volts. In addition to high voltage circuitry, 3m 15 volt analog and digital CMOS and bipolar circuitry
can be integrated on the same monolithic IC without danger of Latch-Up.
Dielectric Isolation processing provides higher breakdown, lower leakages with
greater reliability than is possible using other technologies.
High Voltage IC technology is of particular relevance to obtaining higher
competitive performances in areas such as
Motor and Motion
Panel Display Drivers.
Sensors that perform
better with higher voltage drivers.
applications like Ultra Sound and Imaging.
Drivers for all
kinds of other applications.
Signal Semi-Custom ASICs.
US6000 family of
CMOS arrays achieve single-chip
integration of analog and digital subsystems. These arrays integrate systems
which require A/D, D/A and analog signal processing and interface functions.
Standard functional blocks are available for designing in sub-circuits such as
band gap references, switch capacitor filters, phase lock loops etc.
Standard products include High Voltage Switches operating at 160
- 500 Volts;
Resistor/Capacitor/Schottky Diode Networks with ESD protection of up to 5,000
Volts; 7 bit Flash Converters with operating voltages up to 12 Volts; 68000
interface and peripheral devices and High Speed DMOS Switches.
CMOS Gate Arrays.
comprise a family of base wafers with a range of building blocks of circuits
that have been tried and tested in silicon. Cuts out design time involved in
building these circuits and also the risk of such circuits not working right the
first time. Fully characterized circuits, models are available. Reduces system
design time significantly. Operating voltage range is from 1 to 20 volts.
ISO-CMOS series offer an economical solution for digital applications requiring
between 100 and 2400 gates. Our 2, 3 and 5 Micron technology achieves high speed
and low power with an operating range of up to 15 volts. These arrays are
ideally suited for most 54/74 LS, ACT, HCT applications; and with our ISO-RAD
processing, significant levels of radiation tolerance are assured.
Range of digital
and analog blocks are available. These are fast to make. Typically from the time
the design is ready it takes a week to convert to silicon.
Controllers of all
kinds, power, motion etc.
Op Amp specifics.
Universal Semiconductor offers rugged,
miniature, and high sensitivity MEMS process capability for manufacture of
sensors, transducers, switches, mirrors, and many diverse special custom
designed products that go into wide ranging applications from medical to
aerospace. The MEMS integrated sensor chip can be readily combined with a
signal conditioning circuitry chip for amplification, offset compensation,
linearity improvement, and temperature compensation. All parameters for
amplification, offset compensation, linearity improvement, and temperature
compensation are stored in an internal EEPROM. No additional components
required, simplifies incorporation in to existing systems.
Micro-Optical Element Solutions
USI Photonics provides
state of the art solutions for all your needs in the various Design,
Prototyping and Production phases of your micro-optical elements. Email
us your specific application questions or inquiries about our specific
Micro-Optical capabilities. Design and wafer scale fabrication services
- Hybrid refractive /
- Waveguide elements.
We provide extensive
design and simulation capabilities, and use custom micro-optics design,
simulation as well as EDA tools specifically created to meet the needs
of micro-optics. We do the prototyping in-situ on silicon, fused silica,
quartz or other wafer materials. Small runs of several thousand
replicas we do on wafers. Quantities in millions can be obtained by
plastic injection molding/plastic UV hot embossing which are in the
process of being added on to USI repertoire. The fabrication techniques
offered in silicon and quartz are:
- Binary and
multilevel phase relief (2,4,8,and 16 levels).
- Grey scale masking
process (analog surface relief)
- Resist reflow
process (micro refractive profiles).