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ASICs

 ASICs unaffordable for your volumes ? Think again!  USI's 6000 series is ideal to reduce your PCB size. This low cost integration will not only improve your manufacturing efficiency, it will also improve product performance and give you more consistent  and repeatable performance. Common problems associated with discretes are simply eliminated. You get amazing value from using the 6000-series mixed-signal arrays, just like the other technologies at USI.

 

ON THIS PAGE:

 

MIXED SIGNAL   CMOS IC ARRAYS: 6000 SERIES

 

USI 6000 CMOS Analog - Digital, Silicon Gate, Semi-Custom Arrays: Features and Description

 

ANALOG FUNCTIONS

 
USI 6000 FAMILY KITS
  USI6000 ANALOG/DIGITAL PRODUCT MANUAL

 

  MIXED SIGNAL  CMOS IC ARRAYS: 6000 SERIES  
  Look at these great features:  
  Low cost of ownership: Just one metal mask which could cost as little as  $800;  
  Turnaround within 10 days;  
  Operating voltage: 2 - 15 Volts;  
  Die cost: could range $0.50 - $2.00 per die depending upon the application;  
  Ideal for low volumes;  
  Radhard, great quality.  

 

 Applications

  Sensors for industrial, consumer & medical applications;  
  Industrial Control Systems;  
  Instrumentation & Control;  
  Toys;  
  Appliances  
  Motion Control;  
  etc etc.  

 If you have any questions please send usand we shall respond immediately. You could fax us at (408) 436 1125 or call us at (408) 436 1906.

 

USI 6000 CMOS Analog - Digital  Silicon Gate, Semi-Custom Arrays

 

             FEATURES                   DESCRIPTION
  Kit library available. The USI 6000 family of Gate arrays allow the  conversion of your analog or analog-digital sub-system into a single IC.
   Advanced CMOS silicon gate technology. The USI 6000 series Gate Arrays are integrated circuit products that contain matrices of transistor pairs and dedicated flip-flops designed for high speed digital logic as well as circuit elements optimized for analog circuit applications. These circuit elements include PMOS and NMOS transistors  tailored for precision  analog performance. MOS capacitors, bipolar NPN common collector transistors. Zener diodes, high valued P-resistors and precision polysilicon resistors. These general  purpose chips may be custom engineered through generation of a proprietary metal mask used in conjunction with an inventory of preprocessed wafers.
  2 to 10 Volt power supply.
  Extremely low power consumption
  High noise immunity.
  TTL compatible inputs and outputs.
  Protection network on all inputs.
  CAD available for quick design.
  Dedicated flip-flops. 
  Up to 740 logic gates.
  Up to 55 input/output pads.

 

The USI 6000 family of Gate Arrays is intended to implement systems requiring A/D, D/A and precision analog signal processing and interfacing. A wide range of circuits, including those listed below can be implemented on these arrays. Most of these circuits are available in kit form. Ask for list of available kits.

   Operational amplifiers    DC to DC converters  
  Comparators   Absolute value detectors.  
  Analog multiplexers   Gain controlled amplifiers.  
  Zener and Band gap voltage reference.   Sample and hold amplifiers.  
  A/D and D/A converters.   Voltage to frequency converters.  
  Voltage and crystal controlled oscillators.   Instrumentation amplifiers.  
  Voltage to current converters.   Current sources, current mirrors.  
  Phase locked loops.   Active RC filters  
  Switched capacitor filters.      

 

  

ANALOG FUNCTIONS

  OPERATIONAL AMPLIFIERS, Operating range 1V to 5V.
  COMPARATORS Input offset voltage. Typical 3mV
    Open loop voltage gain. 80 db min.
    Unity Gain Bandwidth. 5 MHz internal compensation.
2 MHz external compensation.
    P-P Noise 50 micro volts.
    Slew Rate 10V per microsecond.
    Internal compensation possible  
    Operates from single lithium cell.  
    N-channel and P-channel input.  
       
  ANALOG MULTIPLEXERS 100 Ohm ON resistance @ 10V supply voltage.  
       
  ZENER AND BANDGAP REFERENCES  Zener Voltage.  5.7 volts.
    Bandgap reference 25V 10%
       
  A/D AND D/A CONVERTERS 12 bit dual slope A/D Converter.  see available kits.
    5 bit flash A/D converter  
    8 bit D/A converter  
       
  OSCILLATORS Crystal controlled oscillator with feedback resistor and Capacitor on chip.  
    R-C Oscillators.  
       
  PHASE LOCKED LOOP Frequency range D.C. to 3 MHz
       
  SWITCHED CAPACITOR FILTERS Minimum of 2 sec order Filters (low or bandpass).  
    Filters with no external components.  
    Bandwidth (Maximum) 50 KHz
       
  D.C TO D.C. CONVERTERS  Voltage inverter & Voltage tripler.  
       
  GAIN CONTROLLED AMPLIFIER  Dynamic range of gain control. 60 dB max.
       
  SAMPLE AND HOLD AMPLIFIERS Sample rate with internal capacitors.  0.5 MHz max.
       
  VOLTAGE TO FREQUENCY CONVERTERS Frequency range to 3 MHz max
       
  INSTRUMENTATION AMPLIFIERS Low Noise 50 micro volts P-P
    Unity Gain Bandwidth 0.5 MHz max
       
  CURRENT SOURCES CURRENT MIRRORS Matching  within 3%
       
  ACTIVE FILTERS Bandwidth (Maximum) 50 KHz.
       
  RESISTORS P-well resistors(20 elements) 30 KOhms (typical)
    Polysilicon resistors (100 elements) 80 Ohms Typ.
       
  CAPACITORS Unit capacity (80 elements) 1.5pF
       
  VERTICAL N-P-N TRANSISTORS  Beta (@ 1ma) 100
       

 

USI 6000 FAMILY KITS

 The following is a list of the blocks available as various kits, using the USI6000 family of products. These kits may be used to establish a basic set of parameters around which the user�s sub system may be specified. They do not necessarily represent the maximum performance attainable, as they are intended to demonstrate a general capability and allow a potential user an opportunity to evaluate an integrable solution to his requirements.

   USI6001 Kit   Voltage Splitter for DC-DC converter use.Voltage Splitter for DC-DC converter use.  
  USI6001 Kit 2.   Medium performance (12 micron gate) Op Amp  
  USI6001 Kit 3   High performance (24 micron gate) Op Amp.  
  USI6001 Kit 4.   12 micron N-channel devices with P-well contacts to determine MOS characteristics. 12 micron N-channel current mirror.  
  USI6001 Kit 5.   24 micron N-channel devices with P-well contacts to determine MOS characteristics. 24 micron N-channel current mirror.  
  USI6001 Kit 6.   Second-order low pass switched capacitor filter.  
  USI6001 Kit 7.   High Speed Comparator.  
  USI6001 Kit 8.   Bandgap reference.  
  USI6001 Kit 9.   Eight bit monotonic DAC.  
  USI6001 Kit 10.   High impedance N-channel and P-channel devices.  
  USI6001 Kit 11.   High speed differential amplifier with fixed gain.  
  USI6001 Kit 12.   4 bit flash converter,  
  USI6001 Kit 13.   12 micron P-channel devices with substrate contact to determine MOS characteristics. 12 micron P-channel current mirror.  
  USI6001 Kit 14.   24 micron P-channel devices with substrate contact to determine MOS characteristics. 24 micron P-channel current mirror.  
  USI6001 Kit 15.   Voltage Controlled Oscillator. (VCO).  
  USI6001 Kit 16.   Triple P-channel Op Amp.  
  USI6001 Kit 17.   Quad P-channel Op Amp.  
  USI6001 Kit 18.   Triple P-channel Op Amp.  
  USI6001 Kit 19.   Quad N-channel Op Amp.  
  USI6001 Kit 20.   Quad comparator.  
  USI6001 Kit 21.   Second-order high-pass switched capacitor filter  

 

USI6000 ANALOG/DIGITAL PRODUCT MANUAL

NOTE: This Manual is shortly being placed on the web site. However, it will be some time before that happens, being a bulky document. IN THE MEANTIME, IT IS AVAILABLE ON DEMAND. In case you require the same. or any specific part/section, please send us an email and we shall have it with you in the shortest possible time. However, for your facilitation, the Index for the same is being appended below.          

INDEX
  Section I    Introduction
      The USI6000 family of Analog/Digital Arrays.
      Description of USI6000 Family Kit Parts.
       
  Section II    Process Technology
      CMOS Technology.
      Electrical Parameters.
      USI Series Silicon Gate Process
      Design Rules.
      Radiation Hardening of CMOS.
       
   Section III   Electrical Characteristics
      Typical Modeling Parameters.
      Transistor Description
      D.C. Characteristics for TTL interface.
      Gate Delays
      Conduction Factor as a Function of Temperature.
      Static Protection.
       
  Section IV   Digital Logic
      Logic Description.
      Emitter Follower Transistor.
      Clock Buffering.
       
  Section V   Digital Cell Layout.
      Description of Core Cell.
      Layout Aids
      Dedicated Latches and Shift Registers
      Description of Chip Periphery
       
  Section VI    MOS Analog Implementation
      Schematic Diagrams of Representative Analog Structure
       
  Section VII    Analog Design Considerations
      Current Mirrors
      Operational Amplifiers
      Bandgap References.
      Digital to Analog Converters.
      Strobed Comparator.
       
  Section VIII   Simulation
      Logic Simulation
      Circuit Simulation
      Switched Capacitor Filter Analyses.
      Switched Capacitor Filter Simulation.
       Spice Parameters.
       
  Section IX   Testing
      Analog/Digital Tester.
      High Speed Digital Tester.
      Parametric Tester.
       
  Section X   Packaging
      Packages
      Die size Chart and Bonding Diagrams.
      Pin Assignments.
       
  Section XI   Cell Library
      Introduction
      List of Library Cells
      Cell Layouts
      Layout Aids

 

 

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