UNIVERSAL SEMICONDUCTOR


 

 

 

 

 

 

 

Home
PRODUCTS
TECHNOLOGY
FOUNDRY
MICRO  OPTICS I
MICRO-OPTICS II
MEMS GAS SENSOR
MEMS Flow Sensor
LINE CARD
ABOUT UNIVERSAL
PRESS RELEASES
SALES REQUEST
CONTACT US

 

Foundry

IDEAL FOR PROTOTYPING, PRODUCT DEVELOPMENT, INITIAL PRODUCT RUNS, MARKET/CONCEPT TESTING SERVICES AVAILABLE

 USI offers foundry services with 3", 4", 5" and 6" capability in the following areas. The Processes available are enumerated below:

Diffusion

Metal deposition

Deposition

Doping

Etching

MEMS

Photo Lithography.

Processes Available

 

 Diffusion: Twenty four furnaces for thin film, CMOS and Bipolar and other processes. These include:

                  

                   

 
  • Oxidation furnaces (Trans LC)
  • Nitride and Poly Deposition.
  • PSG, BPSG., Vapox.
  • Boron doping with BBR3.   
  • LPCVD nitride deposition
  • PECVD nitride deposition
  • LTO doped and undoped
  • Long high temperature drives up to 1200o C
  • Ultra pure gate oxide.

 

 

Deposition

Vapox low temperature (400o C) oxide glassivation. (Can handle 2u, 3u up to 8u wafers)

                                 

Etching. Plasma and Wet etching of metal, silicon, poly, nitride, oxide. RIE etching of metal, silicon, nitride and oxide.

img013.jpg (10327 bytes) 

 Photo Lithography. We also do double sided aligning.

 

 Metal deposition  of Al-Si 1% and Pure Aluminum on wafer.

 

Doping

Boron and POCl3.        

MEMS 

USI offers Design Engineering, Manufacturing and Testing capability for wide ranging MEMs products and devices and for various applications such as

Optical Sensors

Optical Components

VOA Attenuators,

Capacitive and electromagnetic sensors.

Medical components and sensors.    We have the capability to integrate MEMs with CMOS, Bipolar and High Voltage drivers to develop completely integrated high value products, in space saving modules/packages. 

We also do complete processing. To name a few: Bipolar; CMOS; BiCMOS; Hi Voltage; MEMS; Solar Cells and for Opto-electronics. In case you have any requirement, even if it differs from the above, please feel free to get in touch with us, and we will do our utmost to meet your needs. Let us have the details and we shall respond to your requirements immediately. Do review the Line Card.

A partial list of those who have used or are using our facilities:

  • Optical Device developers and manufacturers.
  • Optical switch and components manufacturing companies and Start Ups.
  • Radiation sensor manufacturers.
  • Medical sensor manufacturers.
  • Companies needing MEMs facilities to develop their products.
  • Complete manufacturing services for CMOS, BiCMOS, DMOS and Bipolar ICs.

No work or job piece is too small or too big for us to undertake, please feel free to get in touch with us with your queries. Simply enter the details in the Information Request form and send it to us.       


PROCESSES AVAILABLE

The Steps and processes available are:

LPCVD

SPUTTERING

PHOTOLITHOGRAPHY

BONDING

WET/DRY ETCH

SPECIAL PROCESSES

DIFFUSION

ANNEALING

 

DEVICES

RF- FETS

MEMS

CMOS

HI-VOLT

BIPOLAR

RC/D

SENSORS

STEPS/PROCESSES

 

 

 

 

 

 

 

LPCVD

 

 

 

 

 

 

 

LTO

 

 

 

 

 

 

 

LSN

X

X

X

 

 

 

 

PSG

 

X

 

 

 

 

 

BPSG

X

X

X

X

X

X

X

POLY

 

X

 

 

 

 

X

Ni OXIDE

X

 

X

X

X

X

X

Poly OXIDE

X

 

X

X

X

X

X

Si02

X

 

X

X

X

X

X

 

 

 

 

 

 

 

 

PHOTOLITHOGRAPHY

 

 

 

 

 

 

 

PHOTORESIST (POS/NEG)

X

X

X

X

X

X

X

ALIGNING

X

X

X

X

X

X

X

 

 

 

 

 

 

 

 

WET/DRY ETCH

 

 

 

 

 

 

 

RIE ETCH

X

X

X

X

X

X

X

METALS

X

X

X

X

X

X

X

OXIDE

X

X

X

X

X

X

X

POLY

X

X

X

X

X

X

X

NITRIDE

X

X

X

X

X

X

X

SILICON

X

X

X

X

X

X

X

Back to "Processes Available".

 

 

 

 

 

 

 

DEVICES

RF- FETS

MEMS

CMOS

HI-VOLT

BIPOLAR

RC/D

SENSORS

               

DIFFUSION

 

 

 

 

 

 

 

BBR3

X

 

X

X

X

 

 

POCL3

 

 

 

 

 

 

 

SPUTTERING

 

 

 

 

 

 

 

Al, Al-Si

 

 

 

X

X

 

 

 

 

 

 

 

 

 

 

BONDING

 

 

 

 

 

 

 

ANTIMONY (Sb)

X

X

X

X

X

X

X

ARSENIC (As)

X

X

X

X

X

X

X

BORON (B)

X

X

X

X

X

X

X

PHOSPHORUS (P)

X

X

X

X

X

X

X

ANODIC

 

X

 

 

 

 

 

EUTECTIC

 

X

 

 

 

 

 

FUSION

 

X

 

X

 

 

 

 

 

 

 

 

 

 

 

SPECIAL PROCESSES

 

 

 

 

 

 

 

BACKLAP

X

X

 

 

 

X

 

POLISH

X

X

 

 

 

X

 

HIGH TEMP UP TO 1300 deg C USING SILICON CARBIDE TUBES

 

 

 

 

 

 

 

DRIVE IN UPTO 1300 deg C

 

 

 

 

 

 

 

Back to "Processes Available".

 

 

 

 

 

 

 

ANNEALING

 

 

 

 

 

 

 

Ar, Ar/H2, N2

X

X

X

X

X

X

X

 

                                                             Copyright © Universal Semiconductor
   
                              1925 Zanker Road,  San Jose, CA 95112                                                                                             Updated:  11/30/2013